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| profet ? data sheet bts555 infineon technologies ag 1 of 16 2010-june-01 smart highside high current power switch reversave ? ? reverse battery protection by self turn on of power mosfet features ? overload protection ? current limitation ? short circuit protection ? overtemperature protection ? overvoltage protection (including load dump) ? clamp of negative voltage at output ? fast deenergizing of inductive loads 1) ? low ohmic inverse current operation ? diagnostic feedback with load current sense ? open load detection via current sense ? loss of v bb protection 2) ? e lectro s tatic d ischarge ( esd ) protection ? green product (rohs compliant) ? aec qualified application ? power switch with current sense diagnostic feedback for 12 v and 24 v dc grounded loads ? most suitable for loads with high inrush current like la mps and motors; all types of resistive and inductive loads ? replaces electromechanical relays, fuses and discrete circuits general description n channel vertical power fet with charge pump, cu rrent controlled input and diagnostic feedback with load current sense, integrated in smart sipmos ? chip on chip technology. providing embedded protective functions. in charge pump level shifter rectifier limit for unclamped ind. loads gate protection current limit 2 overvoltage protection + v bb profet ? out 3 & tab 1, 5 load gnd load output voltage detection r is is 4 i is i l v is i in logic gnd voltage sensor voltage source current sense logic esd temperature sensor r bb v in 1 ) with additional external diode. 2) additional external diode required fo r energized inductive loads (see page 9). product summary overvoltage protection v bb(az) 62 v output clamp v on(cl) 44 v operating voltage v bb(on) 5.0 ... 34 v on-state resistance r on 2.5 m ? load current (iso) i l(iso) 165 a short circuit current limitation i l(scp) 520 a current sense ratio i l : i is 30 000 pg-to218-5-146 5 1 straight leads
data sheet bts555 infineon technologies ag 2 2010-june-01 pin symbol function 1 out output to the load. the pins 1 and 5 must be shorted with each other especially in high current applications! 3 ) 2 in input, activates the power switch in case of short to ground 3 v bb positive power supply voltage, the tab is electrically connected to this pin. in high current applications the tab should be used for the v bb connection instead of this pin 4 ) . 4 is diagnostic feedback providing a sense current proportional to the load current; zero current on failure (see truth table on page 7) 5 out output to the load. the pins 1 and 5 must be shorted with each other especially in high current applications! 3) maximum ratings at t j = 25 c unless otherwise specified parameter symbol values unit supply voltage (see page 4 and 5) v bb 40 v supply voltage for full short circuit protection, (e as limitation see diagram on page 10) t j,start =-40c?+150c: v bb 34 v load current (short circuit current, see page 5) i l self-limited a load dump protection v loaddump = u a + v s , u a = 13.5 v r i 5 ) = 2 ? , r l = 0.1 ? , t d = 200 ms, in, is = open or grounded v load dump 6 ) 80 v operating temperature range storage temperature range t j t stg -40 ...+150 -55 ...+150 c power dissipation (dc), t c 25 c p tot 360 w inductive load switch-off energy dissipation, single pulse v bb = 12v, t j,start = 150c, t c = 150c const., i l = 20 a, z l = 15 mh, 0 ? , see diagram on page 10 e as 3j electrostatic disc harge capability (esd) human body model acc. mil-std883d, method 3015.7 and esd assn. std. s5.1-1993, c = 100 pf, r = 1.5 k ? v esd 4.0 kv current through input pin (dc) current through current sense status pin (dc) see internal circuit diagrams on page 8 and 9 i in i is +15 , -250 +15 , -250 ma 3) not shorting all outputs will considerably increase the on-state resistance, reduce the peak current capability and decrease the current sense accuracy 4) otherwise add up to 0.5 m ? (depending on used length of the pin) to the r on if the pin is used instead of the tab. 5) r i = internal resistance of the load dump test pulse generator. 6) v load dump is setup without the dut connected to the generator per iso 7637-1 and din 40839. data sheet bts555 infineon technologies ag 3 2010-june-01 thermal characteristics parameter and conditions symbol values unit min typ max thermal resistanc e chip - case : r thjc 7 ) -- -- 0.35 k/w junction - ambient (free air): r thja -- 30 -- electrical characteristics parameter and conditions symbol values unit at t j = -40 ... +150 c, v bb = 12 v unless otherwise specified min typ max load switching capabilities and characteristics on-state resistance (tab to pins 1,5, see measurement circuit page 7) i l = 30 a, t j = 25 c: v in = 0, i l = 30 a , t j = 150 c: r on -- -- 1.9 3.3 2.5 4.0 m ? i l = 120 a , t j = 150 c: -- -- 4.0 v bb = 6 v 8 ) , i l = 20 a , t j = 150 c: r on(static) -- 4.6 9.0 nominal load current 9 ) (tab to pins 1,5) iso 10483-1/6.7: v on = 0.5 v, t c = 85 c 10 ) i l(iso) 128 165 -- a maximum load current in resistive range (tab to pins 1,5) v on = 1.8 v, t c = 25 c: see diagram on page 13 v on = 1.8 v, t c = 150 c: i l(max) 520 360 -- -- -- -- a turn-on time 11 ) i in to 90% v out : turn-off time i in to 10% v out : r l = 1 ? , t j =-40...+150c t on t off 120 50 -- -- 600 200 s slew rate on 11) (10 to 30% v out ) r l = 1 ? d v /dt on 0.3 0.5 0.8 v/ s slew rate off 11) (70 to 40% v out ) r l = 1 ? -d v /dt off 0.3 0.7 1 v/ s 7) thermal resistance r thch case to heatsink (about 0.25 k/w with silicone paste) not included! 8 ) decrease of v bb below 10 v causes slowly a dynamic increase of r on to a higher value of r on(static) . as long as v bin > v bin(u) max , r on increase is less than 10 % per second for t j < 85 c. 9) not subject to production test, specified by design 10) t j is about 105c under these conditions. 11 ) see timing diagram on page 14. data sheet bts555 infineon technologies ag 4 2010-june-01 parameter and conditions symbol values unit at t j = -40 ... +150 c, v bb = 12 v unless otherwise specified min typ max inverse load current operation on-state resistance (pins 1,5 to pin 3) v bin = 12 v, i l = - 30 a t j = 25 c: see description on page 10 t j = 150 c: r on(inv) -- 1.9 3.3 2.5 4.0 m ? nominal inverse load current (pins 1,5 to tab) v on = -0.5 v, t c = 85 c 10 i l(inv) 128 165 -- a drain-source diode voltage (v out > v bb ) i l = - 20 a, i in = 0, t j = +150c - v on -- 0.6 0.7 v operating parameters operating voltage ( v in = 0) 12 ) v bb(on) 5.0 -- 34 v undervoltage shutdown 13 ) v bin(u) 1.5 3.0 4.5 v undervoltage start of charge pump see diagram page 15 v bin(ucp) 3.0 4.5 6.0 v overvoltage protection 14 ) t j =-40c: i bb = 15 ma t j = 25...+150c: v bin(z) 60 62 -- 66 -- -- v standby current t j =-40...+25c: i in = 0 t j = 150c: i bb(off) -- -- 15 25 25 50 a 12 ) if the device is turned on before a v bb -decrease, the operating voltage range is extended down to v bin(u) . for all voltages 0 ... 34 v the device provides embedded protection functions against overtemperature and short circuit. 13 ) v bin = v bb - v in see diagram on page 7. when v bin increases from less than v bin(u) up to v bin(ucp) = 5 v (typ.) the charge pump is not active and v out v bb - 3 v. 14) see also v on(cl) in circuit diagram on page 8. data sheet bts555 infineon technologies ag 5 2010-june-01 parameter and conditions symbol values unit at t j = -40 ... +150 c, v bb = 12 v unless otherwise specified min typ max protection functions 15 ) short circuit current limit (tab to pins 1,5) 16 ) v on = 12 v, time until shutdown max. 300 s t c =-40c: t c =25c: t c =+150c: i l(scp) 200 200 300 320 400 480 550 620 650 a short circuit shutdown delay after input current positive slope, v on > v on(sc) min. value valid only if input "off-signal" time exceeds 30 s t d(sc) 80 -- 300 s output clamp 17 ) i l = 40 ma: (inductive load switch off) - v out(cl) 14 17 20 v output clamp (inductive load switch off) at v out = v bb - v on(cl) (e.g. overvoltage) i l = 40 ma v on(cl) 40 44 47 v short circuit shutdown detection voltage (pin 3 to pins 1,5) v on(sc) -- 6 -- v thermal overload trip temperature t jt 150 -- -- c thermal hysteresis ? t jt -- 10 -- k reverse battery reverse battery voltage 18 ) - v bb -- -- 16 v on-state resistance (pins 1,5 to pin 3) t j = 25 c: v bb = -12v, v in = 0, i l = - 30 a, r is = 1 k ? t j = 150 c: r on(rev) -- 2.3 3.9 3.0 4.7 m ? integrated resistor in v bb line t j = 25 c: t j = 150 c: r bb 90 105 110 125 135 150 ? 15 ) integrated protection functions are designed to prevent ic destruction under fault conditions described in the data sheet. fault conditions are considered as ?outside? normal operating range. protection functions are not designed for continuous repetitive operation. 16 ) short circuit is a failure mode. the device is not designed to operate continuously into a short circuit by permanent resetting the short circuit latch function. the lifetime will be reduced under such conditions. 17 ) this output clamp can be "switched off" by using an additional diode at the is-pin (see page 8). if the diode is used, v out is clamped to v bb - v on(cl) at inductive load switch off. 18 ) the reverse load current through the intrinsic drain-source diode has to be limited by the connected load (as it is done with all polarity symmetric loads). note that under off-conditions ( i in = i is = 0) the power transistor is not activated. this results in raised power dissipation due to the higher voltage drop across the intrinsic drain-source diode. the temperature protection is not active during reverse current operation! increasing reverse battery voltage capability is simply possible as described on page 9. data sheet bts555 infineon technologies ag 6 2010-june-01 parameter and conditions symbol values unit at t j = -40 ... +150 c, v bb = 12 v unless otherwise specified min typ max diagnostic characteristics current sense ratio, i l = 120 a, t j =-40c: static on-condition, t j =25c: k ilis = i l : i is , t j =150c: v on < 1.5 v 19) , i l = 30 a, t j =-40c: v is < v out - 5 v, t j =25c: v bin > 4.0 v t j =150c: (see diagram on page 12) i l = 16 a, t j =-40c: t j =25c: t j =150c: i l = 12 a, t j =-40c: t j =25c: t j =150c: k ilis 25 000 26 000 24 000 25 000 25 000 23 000 24 000 24 000 23 000 23 000 23 000 23 000 29 000 28 500 26 500 31 200 30 200 27 200 33 500 31 500 27 500 40 500 40 500 29 000 34 000 32 000 29 000 40 000 35 000 31 500 48 000 40 000 32 000 61 000 45 000 34 000 i is =0 by i in =0 (e.g. during deenergizing of inductive loads): sense current saturation i is,lim 6.5 -- -- ma current sense leakage current i in = 0, v is = 0: v in = 0, v is = 0, i l 0: i is(ll) i is(lh) -- -- -- 2 0.5 -- a current sense settling time 20 ) t s(is) -- -- 500 s overvoltage protection t j =-40c: i bb = 15 ma t j = 25...+150c: v bis(z) 60 62 -- 66 -- -- v input input and operating current (see diagram page 13) in grounded (v in = 0) i in(on) -- 0.8 1.5 ma input current for turn-off 21) i in(off) -- -- 40 a 19) if v on is higher, the sense current is no longer proportional to the load current due to sense current saturation, see i is,lim . 20 ) not subject to production test, specified by design 21 ) we recommend the resistance between in and gnd to be less than 0.5 k ? for turn-on and more than 500 k ? for turn-off. consider that when the device is switched off (i in = 0) the voltage between in and gnd reaches almost v bb . data sheet bts555 infineon technologies ag 7 2010-june-01 truth table input current output current sense remark level level i is normal operation l h l h 0 nominal =i l / k ilis , up to i is =i is,lim very high load current h h i is, lim up to v on =v on(fold back) i is no longer proportional to i l current- limitation h h 0 v on > v on(fold back) if v on >v on(sc) , shutdown will occure short circuit to gnd l h l l 0 0 over- temperature l h l l 0 0 short circuit to v bb l h h h 0 data sheet bts555 infineon technologies ag 9 2010-june-01 reverse battery protection logic is in is r v r out l r power gnd signal gnd v bb - power transistor in r bb r d s d r v 1 k ?, r is = 1 k ? nominal. add r in for reverse battery protection in applications with v bb above 16 v 18) ; recommended value: 1 r in + 1 r is + 1 r v = 0.1a | v bb | - 12v if d s is not used (or 1 r in = 0.1a | v bb | - 12v if d s is used). to minimize power dissipation at reverse battery operation, the summarized current into the in and is pin should be about 120ma. the current can be provided by using a small signal diode d in parallel to the input switch, by using a mosfet input switch or by proper adjusting the current through r is and r v . v bb disconnect with energized inductive load provide a current path with load current capability by using a diode, a z-diode, or a varistor. ( v zl < 72 v or v zb < 30 v if r in =0). for higher clamp voltages currents at in and is have to be limited to 250 ma. version a: profet v in out is bb v bb v zl version b: profet v in out is bb v bb v zb note that there is no reverse battery protection when using a diode without additional z-diode v zl , v zb . version c: sometimes a neccessary voltage clamp is given by non inductive loads r l connected to the same switch and eliminates the need of clamping circuit: profet v in out is bb v bb r l data sheet bts555 infineon technologies ag 10 2010-june-01 inverse load current operation profet v in out is bb v bb v out - i l r is v is v in + - + - i is the device is specified for inverse load current operation ( v out > v bb > 0v ). the current sense feature is not available during this kind of operation ( i is = 0). with i in = 0 (e.g. input open) only the intrinsic drain source diode is conducting resulting in considerably increased power dissipation. if the device is switched on (v in = 0), this power dissipation is decreased to the much lower value r on(inv) * i 2 (specifications see page 4). note: temperature protection during inverse load current operation is not possible! inductive load switch-off energy dissipation profet v in out is bb e e e e as bb l r e load l r l { z l r is i in v bb i (t) l energy stored in load inductance: e l = 1 / 2 l i 2 l while demagnetizing load inductance, the energy dissipated in profet is e as = e bb + e l - e r = v on(cl) i l (t) dt, with an approximate solution for r l > 0 ? : e as = i l l 2 r l ( v bb + |v out(cl) |) ln (1+ i l r l |v out(cl) | ) maximum allowable load inductance for a single switch off l = f (i l ); t j,start = 150c, v bb = 12 v, r l = 0 ? l [h] i l [a] externally adjustab le current limit if the device is conducting, the sense current can be used to reduce the short circuit current and allow higher lead inductance (see diagram above). the device will be turned off, if the threshold voltage of t2 is reached by i s *r is . after a delay time defined by r v *c v t1 will be reset. the device is turned on again, the short circuit current is defined by i l(sc) and the device is shut down after t d(sc) with latch function. profet is in is r v r powe r gnd signal gnd v bb out v c load r t1 t2 in signal v bb 1 10 100 1000 10000 100000 1000000 1 10 100 1000 data sheet bts555 infineon technologies ag 11 2010-june-01 options overview type bts 555 overtemperature protection with hysteresis x t j >150 c, latch function 24 ) t j >150 c, with auto-restart on cooling x short circuit to gnd protection with overtemperature shutdown switches off when v on >6 v typ. (when first turned on after approx. 180 s) x overvoltage shutdown - output negative voltage transient limit to v bb - v on(cl) x to v out = -15 v typ x 25 ) 24 ) latch except when v bb - v out < v on(sc) after shutdown. in most cases v out = 0 v after shutdown ( v out 0 v only if forced externally). so the device remains latched unless v bb < v on(sc) (see page 5). no latch between turn on and t d(sc) . 25 ) can be "switched off" by using a diode d s (see page 8) or leaving open the current sense output. data sheet bts555 infineon technologies ag 12 2010-june-01 characteristics current sense versus load current: i is = f ( i l ) i is [ma] i l [a] current sense ratio: k ilis = f ( i l ), t j = -40 c k ilis i l [a] current sense ratio: k ilis = f ( i l ), t j = 25 c k ilis i l [a] current sense ratio: k ilis = f ( i l ), t j = 150 c k ilis i l [a] 0 1 2 3 4 5 6 7 0 50 100 150 max min 20000 25000 30000 35000 40000 45000 50000 55000 60000 65000 0 50 100 150 typ max min 20000 25000 30000 35000 40000 45000 50000 55000 60000 65000 0 50 100 150 typ max min 20000 25000 30000 35000 40000 45000 50000 55000 60000 65000 0 50 100 150 typ max min data sheet bts555 infineon technologies ag 13 2010-june-01 typ. current limitation characteristic i l = f (v on , t j ) i l [a] 0 100 200 300 400 500 600 700 800 900 1000 0 101520 t j = -40c 25c 85c 150c v on(fb) v on >v on(sc) only for t < t d(sc) (otherwise immediate shutdown) v on [v] in case of v on > v on(sc) (typ. 6 v) the device will be switched off by internal short circuit detection. typ. on-state resistance r on = f (v bb , t j ) ; i l = 30 a; v in = 0 r on [mohm] 0 1 2 3 4 5 6 0 5 10 15 20 static dynamic t j = 150c 85c 25c -40c 40 v bb [v] typ. input current i in = f ( v bin ), v bin = v bb - v in i in [ma] 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 20406080 v bin [v] data sheet bts555 infineon technologies ag 14 2010-june-01 timing diagrams figure 1: switching a resistive load, change of load current in on-condition: i in t v out i l i is t son(is) tt slc(is) load 1 load 2 soff(is) t t t on off slc(is) 90% dv/dton dv/dtoff 10% the sense signal is not valid during a settling time after turn-on/off and after change of load current. figure 2a: switching motors and lamps: i in t v out i il i is sense current saturation can occur at very high inrush currents (see i is,lim on page 6). figure 2b: switching an inductive load: i in t v out i l i is figure 3: short circuit: shut down by short circuit detection, reset by i in = 0. i in i l i l(scp) i is t t d(sc) v out =0 v out >>0 shut down remains latched until next reset via input. data sheet bts555 infineon technologies ag 15 2010-june-01 figure 4: overtemperature, reset if (i in =low) and ( t j < t jt ) in s out j t v t i i figure 5: undervoltage restart of charge pump, overvoltage clamp 0 2 4 6 0 v out v bin(ucp) v in = 0 i in = 0 v on(cl) v bin(u) v bin(u) dynamic, short undervoltage not below v on(cl) data sheet bts555 infineon technologies ag 16 2010-june-01 package dimensions all dimensions in mm pg-to218-5-146 bts555 e3146 1) 10.16 = x 4 2.54 1.1 4.9 4 2.54 20.3 0.2 0.3 +0.15 4 10.8 0.2 14.8 0.2 15 -0.02 2 +0.1 1) punch direction, burr max. 0.04 general tolerances 0.1 12.5 +0.2 0.5 0...0.1 2.5 +0.15 p-to218-5-146-po v01 0.5 a b a 0.25 m c b 0.06 0.5 14 1.7 c green product to meet the world-wide customer requirements for environmentally friendly products and to be compliant with government regulations the device is available as a green product. green products are rohs-compliant (i.e pb-free finish on leads). revision history version changes 2010-june-01 rohs-compliant version of bts555 page 1, page 16: rohs compliance statement and green product feature added, package variant with staggered leads removed page 2: pin marking removed. page 11: options overview reduced. 2008-june-24 package drawings updated revision history added legal disclaimer updated edition 2010-06-01 published by infineon technologies ag 81726 munich, germany ? 2010 infineon technologies ag. all rights reserved. legal disclaimer the information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. with respect to any examples or hint s given herein, any typical values stated herein and/or any information regarding the application of the device, infineon technologies hereby disclaims any and all warranties and liabilities of any kind, including without lim itation, warranties of non-infringement of intellectual property rights of any third party. information for further information on technology, delivery terms and conditions and prices please contact your nearest infineon technologies office ( www.infineon.com ). warnings due to technical requirements components may contain dangerous substances. for information on the types in question please contact your nearest infineon technologies office. infineon technologies components may only be used in life-support devices or systems with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered. |
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